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defect density中文是什么意思

  • 缺陷密度

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  • 例句與用法
  • Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
    砷化鎵單晶ab微缺險密度定量檢驗方法
  • Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers
    半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密
  • The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics
    利用m - lec法可以消除單晶中的位錯,降低缺陷密度,降低單晶中的雜質(zhì)含量,并能使雜質(zhì)在晶體中的分布均勻,得到晶體均勻性、純凈度都高的gaas單晶。
  • Compared to gan , which is one of the most successful wide - band semiconductor materials at present , zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno , 25mev for gan ) , which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile , homogeneous bulk zno is available
    和gan相比, zno薄膜具有生長溫度低,激子復合能高( zno : 60mev , gan : 21 25mev ) ,受激輻射閾值較低,能量轉(zhuǎn)換效率很高等優(yōu)點。有可能實現(xiàn)室溫下較強的紫外受激發(fā)射,制備出性能較好的探測器、發(fā)光二極管和激光二極管等光電子器件。
  • With plating time going on , the nano - polycrystal gathering grows in two dimensions , and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface . because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel , the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated , and then their size is smaller . the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content , the microstructure of coating turns from nano - crystalline to the amorphous
    隨著施鍍時間的延長,納米晶聚晶體在橫向二維生長的同時,在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長;在調(diào)質(zhì)態(tài)45鋼表面,由于其具有比較高的晶界和缺陷密度,因此在沉積初期,納米晶聚晶體的成核密度也較大,從而在二維方向聚晶體的尺度較小,鍍層沉積初期表現(xiàn)為致密細小的鱗片狀組織。
  • Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo , tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo . as we know , band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
    利用mg _ xzn _ ( 1 - x ) o薄膜,可以在保持zno六方纖鋅礦( wurtzite )結(jié)構(gòu)的同時有效調(diào)節(jié)調(diào)節(jié)薄膜的禁帶寬度,制備出基于氧化鋅的量子阱、超晶格及相關(guān)的光電器件,如基于氧化鋅的紫外光探測器、紫外發(fā)光二極管和紫外激光二極管等光電子器件。
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